Apparatus and method for manufacturing semiconductor device

ABSTRACT

An apparatus and a method for manufacturing semiconductor devices implemented with improved steps of forming a sealant resin layer on the surface of a wafer substrate provided thereon with protruded electrodes. Through process steps of sending driving signals to a stage unit and discharging head based on the comparison with stage position information from stage position detector, and controlling the position of a substrate holding unit with the suction held semiconductor wafer substrate and the scanning movements of discharging mechanism such that minute liquid droplets of raw sealant resin are suitably discharged from discharging head, a raw sealant resin layer is formed on the surface the wafer substrate except the area for forming bump electrodes. The raw sealant resin layer is subsequently hardened to form a sealant resin layer. The reduction of manufacturing costs, and more precise control of location and thickness of the sealant resin become feasible by the method disclosed herein.

FIELD OF THE INVENTION

[0001] This patent specification relates to an apparatus and a methodfor manufacturing semiconductor devices, and more particularly, to suchapparatus and method implemented with improved steps of forming asealant resin layer on the surface of a wafer substrate provided thereonwith electrodes.

BACKGROUND OF THE INVENTION

[0002] This document claims priority and contains subject matter relatedto Japanese Patent Application No. 2002-195185, filed with the JapanesePatent Office on Jul. 3, 2002, the entire contents of which are herebyincorporated by reference.

[0003] The apparatus and method as well as materials used in the resinsealing play important roles in electronic device packaging. A method isknown for forming a layer of sealant resin on the surface of asemiconductor wafer substrate provided with a protruded electrode, inwhich several steps are proceeded such as forming first a coating layerat the tip of the protruded electrode, forming a layer of raw sealantresin over the substrate so as the tip of the protruded electrode beexposed afterwards, hardening the layer to form a sealant resin layer,and removing the coating layer (Japanese Laid-Open Patent ApplicationNo. 7-161764).

[0004] In a further method previously known, a metal mold is formed toarrange therein a semiconductor wafer substrate, sealant resin tablets,and temporary films for preventing the resin from sticking to the mold.By subsequent heating under pressurization, the resin is spread over thewafer substrate to form a sealant resin layer (Japanese Laid-Open PatentApplication No. 2001-55432). In this method the sealant resin is thenpolished to expose the tip portion of electrodes.

[0005] As another example, the method has been attracting attentionrecently, in that a semiconductor wafer substrate is provided thereonwith semiconductor devices each having protruded electrodes called postelectrodes which are formed so as the tips thereof be exposed, and thatthis semiconductor wafer substrate as-is can be subjected to resinsealing process without being cut into chips. In addition, the notedsemiconductor devices are disclosed as chip-size package or wafer levelchip-size package (Japanese Laid-Open Patent Application No.2000-260910).

[0006] In the resin sealing process for fabricating the chip-sizepackage, sealant resin layers can be formed by spin-coating raw resinlayer or by heat molding under pressurization in a metal mold, forexample. In the spin-coating method for forming the sealant resin layer,however, a drawback is that additional steps must be taken for forming acoating layer at the tip of the protruded electrode, as noted earlier,thereby complicating the process. In addition, other drawbacks areencountered in the method of spin coating such as wasteful use ofresinous material and difficulty in precise control of raw sealant resinlayer especially in the vicinity of protruded electrodes.

[0007] In the method using metal molds, disadvantages are that variouskinds of molds have to be provided corresponding to each wafer substratewith different specification, and that polishing steps are required forexposing tip portions of electrodes, to thereby increase manufacturingcosts.

[0008] Furthermore, there encountered a difficulty in handling the thusprepared sealant resin layer, in which chipping off of the resin layermay arise during dicing steps or conveying steps following the carvingout of the semiconductor devices.

BRIEF SUMMARY OF THE INVENTION

[0009] Accordingly, it is an object of the present disclosure to providean apparatus and a method for manufacturing semiconductor devicesaccording to improved steps of forming a sealant resin layer withreduced costs, having most, if not all, of the advantages and featuresof similar employed device and methods, while eliminating many of theirdisadvantages.

[0010] It is another object of the present disclosure to provide anapparatus and a method for manufacturing semiconductor devices forforming a sealant resin layer on the surface of a wafer substrate suchthat at least the tip portions of protruded electrodes formed on thewafer substrate are exposed.

[0011] The following description is a synopsis of only selected featuresand attributes of the present disclosure. A more complete descriptionthereof is found below in the section entitled “Description of thePreferred Embodiments.”

[0012] An apparatus for manufacturing a semiconductor device disclosedherein preferably includes a substrate holding unit for holding asemiconductor wafer substrate provided at least with an electrode formedon a first surface thereof, a discharging mechanism for dischargingdroplets of raw sealant resin contained in a resin container unitthrough at least one discharging nozzle onto the first surface ofsemiconductor wafer substrate held on the substrate holding unit, adrive mechanism for displacing at least one of the semiconductor wafersubstrate and discharging nozzle, and a control unit for controlling thedischarging mechanism and drive mechanism such that the raw sealantresin is attached to the first surface of semiconductor wafer substrateexcept at least a portion of the electrode.

[0013] The apparatus may further include at least two kinds ofdischarging mechanisms each being capable of discharging raw sealantresin of the amount different from each other, and a heater for heatingthe raw sealant resin contained in the resin container unit.

[0014] In addition, the apparatus disclosed herein for manufacturing asemiconductor device is further characterized by the noted electrodeformed on the surface of semiconductor wafer substrate being a protrudedelectrode, the control unit adapted to control the discharging mechanismand drive mechanism such that the raw sealant resin is attached to thesurface except the tip portion of the protruded electrode, thedischarging mechanism provided with a plurality of discharging nozzles,the substrate holding unit provided with a substrate temperature controlmechanism for controlling temperature of at least the semiconductorwafer substrate, and the control unit is adapted to control thedischarging mechanism and drive mechanism such that the raw sealantresin is not attached to at least a portion of dicing lines and forms alayer with edges of a rounded shape in the vicinity of intersectingpoints of the dicing lines.

[0015] According to another aspect, a method for manufacturing asemiconductor device is provided, including the step of resin sealingfor sealing a semiconductor wafer substrate provided at least with aelectrode formed on a first surface thereof, including at least one of,scanning a discharging nozzle for discharging droplets of raw sealantresin while suitably discharging the droplets, forming a layer of rawsealant resin on the first surface of semiconductor wafer substrate suchthat a portion of the electrode is excluded from the formation of thelayer, and forming a sealant resin layer by hardening the layer of rawresin sealant.

[0016] The present method is further characterized by the additionalstep of forming the layer of raw sealant resin, including forming exceptthe tip portion of the protruded electrode; forming by dischargingdroplets of raw sealant resin of the amount smaller for an area in thevicinity of the electrode than other portions of the semiconductor wafersubstrate; forming except at least a portion of dicing lines; forming soas not to be attached to the dicing lines and to have a rounded shape invicinity of intersecting points of the dicing lines; forming bydischarging droplets of raw sealant resin of the amount suitablydifferentiated depending on the location on the surface of wafersubstrate; and/or forming the layer of raw sealant resin, hardening thelayer of raw sealant resin to form a first semi-hardened sealant resinlayer, repeating at least once a further step of forming a further rawsealant resin layer and hardening the further raw sealant resin layer toform a further semi-hardened sealant resin layer, and hardening thefirst semi-hardened sealant resin layer and the further semi-hardenedsealant resin layer altogether.

[0017] According to still another aspect, a semiconductor device isdisclosed herein, including at least an electrode formed on the surfaceof a semiconductor wafer substrate, and a sealant resin layer formed onthe surface of semiconductor wafer substrate such that a portion of theelectrode is excluded from the formation of the sealant resin layer, inwhich edge portions of the sealant resin layer are formed with a roundedshape.

[0018] The semiconductor device disclosed herein is furthercharacterized by protruded electrodes formed on the surface ofsemiconductor wafer substrate and the sealant resin layer formed excepttip portions of the protruded electrodes.

[0019] The present disclosure and features and advantages thereof willbe more readily apparent from the following detailed description andappended claims when taken with drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020]FIGS. 1A through 1C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the manufacturing process;

[0021]FIG. 2 is a schematic diagram illustrating overall construction ofthe apparatus for manufacturing the semiconductor devices;

[0022]FIGS. 3A and 3B are cross sectional views illustrating the overallconstruction of the discharging head 11 in its standby and operationperiods, respectively;

[0023]FIG. 4 is a schematic diagram illustrating overall construction ofthe apparatus for manufacturing the semiconductor devices according toanother embodiment disclosed herein;

[0024]FIGS. 5A through 5C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein;

[0025]FIG. 6A is a top view of a portion of a semiconductor wafersubstrate 1 after forming a sealant resin layer according to stillanother embodiment disclosed herein;

[0026]FIG. 6B is a cross-sectional view taken along the line 6B-6B ofthe structure of FIG. 6A;

[0027]FIG. 7A is a top view of a portion of a semiconductor wafersubstrate 1 b according to another embodiment disclosed herein;

[0028]FIG. 7B is a cross-sectional view taken along the line 7B-7B ofthe structure of FIG. 7A;

[0029]FIG. 8A is a top view of a portion of a semiconductor wafersubstrate 1 after forming a sealant resin layer according to anotherembodiment disclosed herein;

[0030]FIG. 8B is a cross-sectional view taken along the line 8B-8B ofthe structure of FIG. 8A;

[0031]FIGS. 9A through 9D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein;

[0032]FIGS. 10A through 10D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein;

[0033]FIGS. 11A through 11D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein;

[0034]FIGS. 12A through 12C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein;

[0035]FIG. 13A is a top view of a portion of a semiconductor wafersubstrate 1 b according to another embodiment disclosed herein; and

[0036]FIG. 13B is a cross-sectional view taken along the line 13B-13B ofthe structure of FIG. 13A.

DETAILED DESCRIPTION OF THE INVENTION

[0037] In the detailed description which follows, specific embodimentsof the apparatus and method are described, which are particularly usefulfor forming a sealant resin layer on the surface of a semiconductorwafer substrate provided thereon with electrodes. It is understood,however, that the present disclosure is not limited to theseembodiments. For example, the apparatus and method for the formationdisclosed herein may also be adaptable to any form of layer formation.Other embodiments will be apparent to those skilled in the art uponreading the following description.

[0038] The apparatus disclosed herein for manufacturing a semiconductordevice, as described earlier, includes a substrate holding unit forholding a semiconductor wafer substrate provided at least with anelectrode formed on a first surface thereof, a discharging mechanism fordischarging droplets of raw sealant resin contained in a resin containerunit onto the first surface of semiconductor wafer substrate held on thesubstrate holding unit, a drive mechanism for displacing at least one ofthe semiconductor wafer substrate and discharging nozzle, and a controlunit for controlling the discharging mechanism and drive mechanism suchthat the raw sealant resin is attached to the surface of semiconductorwafer substrate except at least a portion of the electrode.

[0039] In the case where protruded electrodes are formed on a firstsurface of the semiconductor wafer substrate, a layer of raw sealantresin is formed by discharging the resin such that the tip portion ofthe protruded electrode is excluded from the formation of the layer.Thereafter, the wafer substrate is removed from the substrate holdingunit 3, subjected so as the raw sealant resin layer be formed on thesurface of semiconductor wafer substrate.

[0040] As the raw sealant resin used herein, there exemplified arethermoplastic or thermosetting plastics and other similar materials.

[0041] By means of the apparatus disclosed herein, the raw sealant resinlayer can be formed without several steps for exposing the tip portionof the protruded electrode such as forming a coating layer at the tip ofthe protruded electrode and polishing the tip portions, therebyfacilitating for simplifying manufacturing process. In addition, sinceno metal mold is used, various kinds of semiconductor devices can beproduced with one single apparatus. Still in addition, since wastefuluse of resinous material can be reduced compared with the method forforming the sealant resin layer by spin coating method, manufacturingcosts can be reduced with the present method.

[0042] Furthermore, since the amount of raw sealant resin can suitablybe differentiated during discharging steps depending on the location onthe surface of wafer substrate, more precise control of the thickness ofsealant resin layer becomes feasible with the apparatus disclosedherein.

[0043] The method disclosed herein for manufacturing a semiconductordevice, as described earlier, includes the step of resin sealing forsealing a semiconductor wafer substrate provided at least with aelectrode formed on a first surface thereof, including at least one ofscanning a discharging nozzle for discharging droplets of raw sealantresin while suitably discharging the droplets, forming a layer of rawsealant resin on the surface of semiconductor wafer substrate such thata portion of the electrode is excluded from the formation of the layer,and forming a sealant resin layer by hardening the layer of raw resinsealant.

[0044] By means of the method disclosed herein, the raw sealant resinlayer can be formed without the steps for exposing the tip portion ofthe protruded electrode, thereby facilitating for simplifyingmanufacturing process. In addition, since no metal mold is necessary inthis method, no mold has to be prepared. Still in addition, wasteful useof resinous material is alleviated compared with the method for formingthe sealant resin layer by spin coating method. As a result,manufacturing costs can be reduced.

[0045] Furthermore, since the amount of raw sealant resin can suitablybe controlled depending on the location on the surface of wafersubstrate, more precise control of the thickness of sealant resin layerbecomes feasible.

[0046] In the case where the present method is applied to the wafersubstrate provided with pad electrodes, the sealant resin layer 83 isformed having openings at least above the pad electrodes. Since thisenables to eliminate etching process steps, the number of steps can bereduced, thereby facilitating for reducing manufacturing costs.

[0047] The semiconductor device disclosed herein, as described earlier,includes an electrode formed on the surface of a semiconductor wafersubstrate, and a sealant resin layer formed on the surface ofsemiconductor wafer substrate such that a portion of the electrode isexcepted from the formation of the sealant resin layer, in which edgeportions of the sealant resin layer are formed with a rounded shape.

[0048] In the thus formed semiconductor devices, rounded corners areformed at four corners and upper edge portions of the sealant resinlayer, chipping off of the resin layer can be alleviated during dicingand conveying steps following the carving out of the semiconductordevices.

[0049] The present disclosure will be described in more detail below byway of examples.

[0050]FIGS. 1A through 1C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the manufacturing process. FIG. 2 is a schematic diagram illustratingoverall construction of the apparatus for manufacturing thesemiconductor devices.

[0051] Referring now to FIG. 2, the apparatus will be describedaccording to one embodiment disclosed herein. The apparatus formanufacturing the semiconductor devices includes at least asemiconductor wafer substrate 1 and a substrate holding unit 3. Thesemiconductor wafer substrate 1 is provided with several bumpedelectrodes (not shown) each having a protruded shape on a first surface1 a thereof.

[0052] The substrate holding unit 3 is provided for holding the wafersubstrate 1 with its first surface 1 a up. On top face of the substrateholding unit 3 there provided are small openings (not shown) in use forholding substrate 1 with vacuum with the first surface 1 a up, and theopenings, in turn, are each connected to a vacuum unit (not shown) byway of evacuation paths. The substrate holding unit 3 is thereby formedto be capable of properly holding the semiconductor wafer substrate 1.

[0053] In addition, the substrate holding unit 3 is further providedwith a heater 5 for heating the wafer substrate 1 and a temperaturesensor 7 for measuring the temperature of the holding unit 3. The heater5 and temperature sensor 7 then constitute a substrate temperaturecontrol mechanism in the apparatus for manufacturing the semiconductordevices disclosed herein.

[0054] Further provided is a stage unit 9 in use for positioning thesubstrate holding unit 3. The stage unit 9 is adapted for eitherdisplacing the substrate holding unit 3 in horizontal and/or verticaldirections, or rotating on the horizontal plane. The unit 3 thereforeconstitutes a drive mechanism in the apparatus for manufacturing thesemiconductor devices disclosed herein.

[0055] There provided are a discharging head 11 above the stage unit 9adapted for discharging raw (uncured) sealant resin and an imageinformation camera 31 for acquiring the images of semiconductor wafersubstrate 1. The discharging head 11 therefore constitutes a dischargingmechanism in the apparatus for manufacturing the semiconductor devicesdisclosed herein. It may be added that the position of the discharginghead 11 and image information camera 31 are fixed respectively accordingto the present embodiment.

[0056]FIGS. 3A and 3B are cross sectional views illustrating the overallconstruction of the discharging head 11 in its standby and operationperiods, respectively. A plurality of discharging nozzles 13 are formed,being aligned either in line or in array, on the face of the discharginghead 11 opposing to the semiconductor wafer substrate 1.

[0057] There shown for purposes of explanation, respectively, are twoand one discharging nozzles 13 for the discharging head of FIGS. 2 and3. In addition, a resin container unit 15 is provided for each of thedischarging nozzles 13 for containing the raw sealant resin. The resincontainer unit 15 is connected to the discharging nozzles 13 by way of afluid feeding path 17 and a discharging vessel 19. A portion of the wallof fluid feeding path 17 is formed of a thin flexible film 21. On oneside of the thin flexible film 21 opposite to the fluid feeding path 17,a piezoelectric element 23 is also provided. In addition, thedischarging head 11 is provided with a heater 25 for heating, and atemperature sensor 27 for measuring the temperature of, the raw sealantresin.

[0058] The thus formed discharging head 11 is operated as follows. Thedischarging head 11 is adapted for discharging liquid droplets 29 of rawsealant resin by exerting pressure generated by the deformation of thepiezoelectric element 23.

[0059] For example, the piezoelectric element 23 is elongated byapplying a voltage and the fluid feeding path 17 is then pressurized. Asa result, a predetermined amount of sealant resin is discharged throughthe discharging nozzles 13 by the pressure presently applied (FIG. 3B).When the piezoelectric element 23 returns to the previous state, anotheramount of raw sealant resin is drawn by suction from the resin containerunit 15 into fluid feeding path 17 (FIG. 3A). The amount of raw sealantresin discharged through the discharging head 11 is adjusted toapproximately 0.05 nanoliter, for example.

[0060] The discharging head 11 disclosed herein according to the presentembodiment, therefore, has the structure similar to the piezoelectrictype (or piezo-jet type) printer head for use in ink jet printers.

[0061] Referring again to FIG. 2, a control unit 33 is additionallyprovided which is electrically connected to, and adapted forcontrolling, the stage unit 9 and discharging head 11. A stage positiondetector 35 is provided in the vicinity of the stage unit 9 foracquiring information on the position of this stage unit 9. To thecontrol unit 33 there electrically connected are the temperature sensor7, image information camera 31, and stage position detector 35, as well.

[0062] Several pieces of information such as temperature informationfrom temperature sensors 7, 27, image information from the imageinformation camera 31, and stage position information from the stageposition detector 35, are transmitted to the control unit 33.Furthermore, a monitor 37 is also electrically connected to the controlunit 33 for displaying setting information, for example.

[0063] Referring now to FIGS. 1A through 2, the method for manufacturingsemiconductor devices will be described according to one embodimentdisclosed herein together with the description on the operation of themanufacturing apparatus. It may be noted that only one of thedischarging nozzles 13 is included in the apparatus of FIGS. 1A through1C and other portions are herein abbreviated.

[0064] In addition, as the raw sealant resin which is generallyexemplified by thermoplastic or thermosetting plastics and other similarmaterials, there selected in the present embodiment is a thermosettingresin, liquid epoxy sealant resin CEL-C-3140 (commercially availablefrom Hitachi Chemical Co.) with viscosity of 0.6 Pa·s. (1) Asemiconductor wafer substrate 1 is provided thereon with a metallizedwiring layer 39 and a pad electrode 41, which are each formed on a firstsurface 1 a of the substrate 1. A bump electrode 43 is additionallyformed on top of the pad electrode 41.

[0065] The thus prepared entire structure of the semiconductor wafersubstrate 1 is subsequently placed on a substrate holding unit 3 withthe first surface 1 a up. The bump electrode 43 is formed of solder, forexample, having a height of 20 μm from the first surface 1 a (FIG. 1A).

[0066] The substrate holding unit 3 then operates to hold with vacuumthe semiconductor wafer substrate 1. Also for the semiconductor wafersubstrate 1, surface treatment steps to improve the wettability with theraw sealant resin may be carried out on the face of the first surface 1a, metallized wiring layer 39, pad electrode 41, and/or bump electrode43.

[0067] Alternatively, the semiconductor wafer substrate 1 may be coatedwith a thin layer of materials which can yield suitable wettability.Suitable examples of the surface treatment for also yielding thewettability include one utilizing active species, which are generatedfrom gaseous ozone or plasma and brought in contact with the surface.The surface treatment, however, may not always be necessary, but beutilized when necessary.

[0068] (2) The control unit 33 is adapted for controlling the heating bymeans of the heater 25 based on temperature information from thetemperature sensor 27, to thereby properly control the temperatures ofraw sealant resin at the locations in the resin container unit 15, fluidfeeding path 17, and discharging vessel 19, in the discharging head 11.

[0069] In addition, the control unit 33 also controls the heating by theheater 5 based on temperature information from the temperature sensor 7,to thereby properly control the temperature of the surface 1 a of wafersubstrate 1.

[0070] The positioning steps for the semiconductor wafer substrate 1held on the substrate holding unit 3 are carried out by means of thecontrol unit 33 by properly displacing the stage unit 9 based on imageinformation from image information camera 31.

[0071] During the positioning process the control unit 33 is adapted forcalculating, based on image information on wafer substrate 1 from imageinformation camera 31, the area of the semiconductor wafer substrate 1,onto which raw sealant resin is to be discharged except the area for thebump electrode 43.

[0072] Subsequently followed are several steps such as sending drivingsignals to the stage unit 9 and discharging head 11 based on thecomparison with the stage position information from stage positiondetector 35, positioning the substrate holding unit 3 with the suctionheld semiconductor wafer substrate 1, suitably discharging liquiddroplets 29 of raw sealant resin from discharging head 11, and formingthereby a raw sealant resin layer 45 on the surface 1 a of the wafersubstrate 1 including metallized wiring layer 39 and pad electrode 41.

[0073] It should be added, the steps of discharging during the processare carried out such that no liquid droplet 29 of raw sealant resin fromdischarging head 11 is discharged onto the area of the bump electrode43. The raw sealant resin layer 45 is formed in the present embodimentto a thickness of 20 μm, for example (FIG. 1B).

[0074] Since the volume of the droplet of raw sealant resin dischargedby the discharging head 11 can be controlled with a precision as much as5 nanoliter, the resin amount of the droplets 29 can also be controlledto such an extent that the separation between the bump electrode 43 andthe resin layer is suitably achieved with a precision of severalmicrons, for example.

[0075] (3) Following the formation of raw sealant resin layer 45 on thesurface 1 a of the wafer substrate 1 except the area of the bumpelectrode 43, the wafer substrate 1 is removed from the substrateholding unit 3.

[0076] The wafer substrate 1 is subsequently subjected to heattreatments, first at 120° C. for 30 min and then at 150° C. for 120 min,for thermosetting the raw sealant resin layer 45, whereby a sealantresin layer 47 is formed having a thickness of about 20 μm (FIG. 1C).

[0077] The process steps described above for forming the sealant resinlayer 47 on the surface 1 a of the wafer substrate 1 (resinencapsulation steps) are carried out such that the top portion of thebump electrode 43 is uncovered of the resin layer. The steps otherwisenecessitated for removing resin portions on the bump electrode cantherefore be eliminated. The present method can thus facilitate tosimplify manufacturing process steps.

[0078] In addition, since this eliminates the use of metal mold for theresin capsulation, various kinds of semiconductor device products can behandled with one single manufacturing apparatus disclosed herein.Further, wasteful use of resinous material can be reduced compared withthe method of spin coating. As a result, manufacturing costs can bereduced with the present method.

[0079] Still in addition, the amount of the resinous material to bedischarged onto the surface 1 a of the wafer substrate 1 can suitablycontrolled depending on the portion thereof specifically, the precisecontrol of the thickness of the sealant resin layer 47 can be achievedwith more ease.

[0080]FIG. 4 is a schematic diagram illustrating overall construction ofthe apparatus for manufacturing the semiconductor devices according toanother embodiment disclosed herein, in which components similar tothose in FIG. 2 are shown with identical numerical representations anddetailed description thereof is herein abbreviated.

[0081] A further discharging head 49 is provided above the stage unit 9for discharging raw sealant resin of the amount different from thedischarging head 11. The position of the discharging head 49 is hereinfixed. In addition, the discharging head 49 is formed having a similarstructure to the head 11 and adapted for discharging droplets of rawsealant resin adjusted to approximately 100 nanoliter, for example. Thecontrol unit 33 is then adapted to control the operation of thedischarging head 49, as well.

[0082]FIGS. 5A through 5C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein.

[0083] The apparatus shown in FIG. 4 is utilized also in the presentembodiment as the apparatus for manufacturing the semiconductor devices.It may be noted that two discharging nozzles 13 are shown in theapparatus of FIGS. 5A through 5C and other portions are hereinabbreviated.

[0084] Referring now to FIGS. 4 through 5C, the method for manufacturingsemiconductor devices will be described together with the description onthe operation of the manufacturing apparatus.

[0085] (1) A semiconductor wafer substrate 1 is provided thereon with ametallized wiring layer 39 and a pad electrode 41, which are each formedon a first surface 1 a of the substrate 1. A bump electrode 43 isadditionally formed on top of the pad electrode 41. The thus preparedentire structure of the semiconductor wafer substrate 1 is subsequentlyplaced on a substrate holding unit 3 with the first surface 1 a up. Thecontrol unit 33 then calculates the area of the semiconductor wafersubstrate 1, onto which sealant resin is to be discharged.

[0086] Thereafter, the control unit 33 operates to control the movementsof the discharging heads 11, 49 and the stage unit 9, so as to initiatedischarging the raw sealant resin onto the surface 1 a of the wafersubstrate 1. For the surface area except in the vicinity of the bumpelectrode 43, a raw sealant resin layer is formed using the discharginghead 49 having the capability of discharging liquid droplets 50 of theabove noted larger amount. As a result, the throughput for devicemanufacturing can be improved comparing with the case where the rawsealant resin layer is formed using the discharging head 46 with liquiddroplets 50 of a smaller amount (FIG. 5A).

[0087] (2) On the surface area in the vicinity of the bump electrode 43as close equal to, or less than 5 μm, for example, another raw sealantresin layer is formed using the discharging head 11 having thecapability of discharging liquid droplets 29 of a smaller amount. As aresult, the resin amount can be controlled to such an extent that theseparation between the bump electrode 43 and resin layer is suitablyachieved with proper precision (FIG. 5B).

[0088] (3) Following the formation of the raw sealant resin layer 45 onthe surface 1 a of the wafer substrate 1 except the area of the bumpelectrode 43, the wafer substrate 1 is removed from the substrateholding unit 3. The wafer substrate 1 is subsequently subjected to heattreatments, first at 120° C. for 30 min and then at 150° C. for 120 min,for thermosetting the raw sealant resin layer 46, whereby a furthersealant resin layer 48 is formed having a thickness of about 20 μm (FIG.5C).

[0089]FIGS. 6A and 6B are prepared to illustrate the method formanufacturing semiconductor devices according to still anotherembodiment disclosed herein, in which FIG. 6A is a top view of a portionof a semiconductor wafer substrate 1 after forming a sealant resin layerand FIG. 6B is a cross-sectional view taken along the line 6B-6B of thestructure of FIG. 6A.

[0090] The apparatus shown in FIG. 2 is utilized also in the presentembodiment as the apparatus for manufacturing the semiconductor devices.Referring now to FIGS. 2, 6A and 6B, the method for manufacturingsemiconductor devices will be described together with the description onthe operation of the manufacturing apparatus.

[0091] (1) In a manner similar to that described earlier referring toFIG. 1, a semiconductor wafer substrate 1 is placed on a substrateholding unit 3 with the first surface 1 a up; the temperatures of rawsealant resin at the locations in the resin container unit 15, fluidfeeding path 17, and discharging vessel 19, in the discharging head 11are controlled through the control of the heater 25 by means of controlunit 33; and the temperature of the surface 1 a of wafer substrate 1 isproperly controlled through the control of heater 5 by means of alsocontrol unit 33.

[0092] (2) The positioning steps for the semiconductor wafer substrate 1held on the substrate holding unit 3 are carried out by means of thecontrol unit 33 by properly displacing the stage unit 9. During thepositioning process the control unit 33 is adapted for calculating,based on image information on wafer substrate 1 from image informationcamera 31 utilizing image recognition techniques, the area of thesemiconductor wafer substrate 1, onto which raw sealant resin is to bedischarged except the areas for forming the bump electrode 43 and forcenter portions of dicing lines.

[0093] Subsequently followed are several steps such as sending drivingsignals to the stage unit 9 and discharging head 11 based on thecomparison with the stage position information from stage positiondetector 35, positioning the substrate holding unit 3 with the suctionheld semiconductor wafer substrate 1, suitably discharging minute liquiddroplets of raw sealant resin from discharging head 11, and formingthereby a raw sealant resin layer on the surface 1 a of the wafersubstrate 1 including metallized wiring layer 39 and pad electrode 41.

[0094] It should be added, the noted steps of discharging are carriedout such that no liquid droplet of raw sealant resin from discharginghead 11 is attached to the area for forming the bump electrode 43 andcenter portions of dicing lines 51. The raw sealant resin layer isformed in the present embodiment to a thickness of 20 μm, for example.

[0095] (3) Following the formation of raw sealant resin layer on thesurface 1 a of the wafer substrate 1 except the area of the bumpelectrode 43 and center portions of dicing lines 51, the wafer substrate1 is removed from the substrate holding unit 3. The wafer substrate 1 issubsequently subjected to heat treatments, first at 120° C. for 30 minand then at 150° C. for 120 min, for thermosetting the raw sealant resinlayer 45, whereby a sealant resin layer 47 is formed having a thicknessof about 20 μm.

[0096] According to the process steps described above referring to FIGS.6A and 6B, the sealant resin layer is formed on the surface 1 a of thewafer substrate 1 except the top portion of the bump electrode 43 andcenter portions of dicing lines 51. The present method can thereforefacilitate also to simplify manufacturing process steps in a mannersimilar to the embodiment described earlier referring to FIG. 1,reducing manufacturing costs and achieving precise control of thethickness of the sealant resin layer with more ease.

[0097] In addition, since center portions of dicing lines 51 areuncovered by the sealant resin layer 53 as indicated above, the warpingof the wafer substrate 1, which may be caused by stress, can bealleviated. Still in addition, although the sealant resin layer 53 isformed on the center portions of dicing lines 51 with partiallyoverlapped portions, as described above, it is not intended to belimiting to the present disclosure. For example, the sealant resin layer53 may alternatively be formed over the entire area of the dicing lines51.

[0098] Furthermore, although the apparatus shown in FIG. 2 is utilizedabove, the apparatus of FIG. 4 may alternatively be used formanufacturing the semiconductor devices.

[0099]FIGS. 7A and 7B are prepared to illustrate the method formanufacturing semiconductor devices according to another embodimentdisclosed herein, in which FIG. 7A is a top view of a portion of asemiconductor wafer substrate 1 b and FIG. 7B is a cross-sectional viewtaken along the line 7B-7B of the structure of FIG. 7A. A semiconductorwafer substrate 1 b is provided thereon with a metallized wiring layer39 and a pad electrode 41, which are each formed on a first surface 1 aof the substrate 1 b, and a bump electrode 43 formed on top of the padelectrode 41.

[0100] A sealant resin layer 55 is subsequently formed on the surface 1a of the wafer substrate 1 including metallized wiring layer 39 and padelectrode 41 to such a thickness as to expose the top portion of thebump electrode 43.

[0101] In addition, four corners 57 of the wafer substrate 1 b are eachprovided with rounded corners (FIG. 7A). Furthermore, upper edgeportions 59 of the sealant resin layer 55 are also provided with roundedcorners as viewed along the extension of the side lines of the upperedge portions (FIG. 7B).

[0102] The thus formed round corners 57 of the sealant resin layer 55facilitates the reduction of possible chipping off of the resin layer55, which is caused during dicing the semiconductor wafers and conveyingsemiconductor devices.

[0103] In addition, since dicing blades do not come into contact withthe upper edge portions 59 of the sealant resin layer 55 during dicingprocess, chipping off of the resin layer 55 can also be alleviated.

[0104] Furthermore, because of the above noted round corners formed onthe upper edge portions 59 of the sealant resin layer 55, chipping offof the resin layer 55 at the edge portions 59 can also be reduced duringconveyance following the dicing of the semiconductor devices.

[0105]FIGS. 8A and 8B are prepared to illustrate the method formanufacturing semiconductor devices according to another embodimentdisclosed herein, in which FIG. 8A is a top view of a portion of asemiconductor wafer substrate 1 after forming a sealant resin layer andFIG. 8B is a cross-sectional view taken along the line 8B-8B of thestructure of FIG. 8A.

[0106] The presently disclosed method is related to the production ofsemiconductor devices of FIGS. 7A and 7B. The apparatus shown in FIG. 2is utilized also in the present embodiment as the apparatus formanufacturing the semiconductor devices.

[0107] Referring now to FIGS. 2, 8A and 8B, the method for manufacturingsemiconductor devices will be described together with the description onthe operation of the manufacturing apparatus.

[0108] (1) In a manner similar to that described earlier referring toFIG. 1, a semiconductor wafer substrate 1 is placed on a substrateholding unit 3 with the first surface 1 a up; the temperatures of rawsealant resin at the locations in the resin container unit 15, fluidfeeding path 17, and discharging vessel 19, in the discharging head 11are controlled through the control of the heater 25 by means of controlunit 33; and the temperature of the surface 1 a of wafer substrate 1 isproperly controlled through the control of heater 5 by means of alsocontrol unit 33.

[0109] (2) The positioning steps for the semiconductor wafer substrate 1held on the substrate holding unit 3 are carried out by means of thecontrol unit 33 by properly displacing the stage unit 9. During thepositioning process the control unit 33 is adapted for calculating,based on image information on wafer substrate 1 from image informationcamera 31 utilizing image recognition techniques, the area of thesemiconductor wafer substrate 1, onto which raw sealant resin is to bedischarged except several areas such as for forming the bump electrode43, for all dicing lines 51, and in the vicinity of intersecting pointsof the dicing lines.

[0110] There followed are several process steps such as sending drivingsignals to the stage unit 9 and discharging head 11 based on thecomparison with the stage position information from stage positiondetector 35, positioning the substrate holding unit 3 with the suctionheld semiconductor wafer substrate 1, suitably discharging minute liquiddroplets of raw sealant resin from discharging head 11, and formingthereby a raw sealant resin layer on the surface 1 a of the wafersubstrate 1 including metallized wiring layer 39 and pad electrode 41.

[0111] It should be added, the noted steps of discharging are carriedout such that no liquid droplet of raw sealant resin from discharginghead 11 is attached to the area for forming the bump electrode 43, forall dicing lines 51, and in the vicinity of intersecting points of thedicing lines, and that the boundary lines of presently discharged rawsealant resin on the wafer substrate are formed each having roundedshapes at respective corner portions. The raw sealant resin layer isformed in the present embodiment to a thickness of 20 μm, for example.

[0112] (3) Following the formation of raw sealant resin layer on thesurface 1 a of the wafer substrate 1 except the areas of the bumpelectrode 43, all dicing lines 51 and the vicinity of intersectingpoints of the dicing lines, such as for forming the bump electrode 43,for all dicing lines 51, the wafer substrate 1 is removed from thesubstrate holding unit 3.

[0113] The wafer substrate 1 is subsequently subjected to heattreatments, first at 120° C. for 30 min and then at 150° C. for 120 min,for thermosetting the raw sealant resin layer 45, whereby a sealantresin layer 55 is formed having a thickness of about 20 μm.

[0114] According to the present method, therefore, four corners 57 ofthe wafer substrate 1 b are each provided with rounded corners, andupper edge portions 59 of the sealant resin layer 55 are provided withalso rounded corners as viewed along the extension of the side lines ofthe upper edge portions.

[0115] As shown in FIGS. 8A and 8B, a sealant resin layer 55 is thusformed on the surface 1 a of the wafer substrate 1 except the areas ofthe bump electrode 43, all dicing lines 51 and the vicinity ofintersecting points of the dicing lines.

[0116] The present method can therefore facilitate also to simplifymanufacturing process steps in a manner similar to the embodimentdescribed earlier referring to FIG. 1, reducing manufacturing costs andachieving precise control of the thickness of the sealant resin layerwith more ease.

[0117] In addition, since center portions of dicing lines 51 and thevicinity of intersecting points of the dicing lines are uncovered by thesealant resin layer 53, the warping of the wafer substrate 1, which maybe caused by stress, can be alleviated.

[0118] (4) The wafer substrate 1 provided thereon with sealant resinlayer 55 is subsequently diced along dicing lines 51, wherebysemiconductor devices are carved out (dicing process).

[0119] Since the dicing lines 51 are uncovered by the sealant resinlayer 55, chipping off, which is possibly caused at the four corners 57of the region for forming the sealant resin layer 55 corresponding tointersecting points 51 a of the dicing lines 51 and the upper edgeportions 59, can be reduced during dicing process.

[0120] Furthermore, since rounded corners are formed at four corners 57and at the upper edge portions 59 of the sealant resin layer 55 asviewed along the extension of the side lines of the upper edge portions(FIG. 7B), chipping off of the resin layer can also be reduced duringconveyance following the carving out of the semiconductor devices.

[0121] Although the sealant resin layer 53 is formed in the presentembodiment, rounded portions are formed at the four corners 57 of theregion for forming the sealant resin layer 55 corresponding tointersecting points 51 a of the dicing lines 51, it is not intended tobe limiting to the present disclosure.

[0122] For example, rounded portions may not be intended to be formed atthe four corners 57 of the region for forming the sealant resin layer 55corresponding to intersecting points, and a sealant resin layer may notbe formed on the dicing lines either.

[0123] In this case, since rounded portions can be formed at fourcorners of the region for forming the sealant resin layer and the upperedge portions 59 through surface tension of raw sealant resin, chippingoff of the resin layer can also be reduced during conveyance followingthe carving out of the semiconductor devices. Furthermore, since thedicing lines are uncovered with the sealant resin layer, chipping offduring dicing process of the resin layer can be alleviated. Stillfurther, although the apparatus shown in FIG. 2 is utilized above, theapparatus of FIG. 4 may alternatively be used for manufacturing thesemiconductor devices.

[0124]FIGS. 9A through 9D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein. Theapparatus shown in FIG. 4 is utilized also in the present embodiment asthe apparatus for manufacturing the semiconductor devices. It may benoted that a discharging nozzles 11 is shown in the apparatus of FIGS.9A through 9D and other portions are herein abbreviated.

[0125] Referring now to FIGS. 2, 9A through 9D, the method formanufacturing semiconductor devices will be described together with thedescription on the operation of the manufacturing apparatus.

[0126] (1) A semiconductor wafer substrate 1 is provided thereon with ametallized wiring layer 39 and a pad electrode 41, which are each formedon a first surface 1 a of the substrate 1. A bump electrode 61 isadditionally formed on top of the pad electrode 41. The thus preparedentire structure of the semiconductor wafer substrate 1 is subsequentlyplaced on a substrate holding unit 3 with the first surface 1 a up. Thebump electrode 61 is formed of solder, for example, having a height of20 μm from the first surface 1 a.

[0127] Following the calculation by the control unit 33, of the area ofthe semiconductor wafer substrate 1, onto which sealant resin is to bedischarged, the movements of the stage unit 9 and discharging heads 11are controlled, the discharge of raw sealant resin is initiated onto thesurface 1 a of the wafer substrate 1, whereby a raw sealant resin layer63 having a thickness of approximately 20 μm is formed on the surface 1a of the wafer substrate 1 except the area for forming the bumpelectrode 61 (FIG. 9A).

[0128] (2) Following the formation of the raw sealant resin layer 45 onthe surface 1 a of the wafer substrate 1 except the area for forming thebump electrode 61, the wafer substrate 1 is subjected to heat treatmentat 90° C. for 30 min to form a semi-hardened layer, whereby asemi-hardened sealant resin layer 65 is formed (FIG. 9B). The heattreatment may be carried out by either the heater 5 previously providedin the substrate holding unit 3 or other heating devices after removingthe wafer substrate 1 from the substrate holding unit 3.

[0129] (3) Subsequently, by controlling the movements of the stage unit9 and discharging heads 11, another raw sealant resin layer 67 is formedto a thickness of approximately 20 μm, for example, on top of thesemi-hardened sealant resin layer 65 (FIG. 9C).

[0130] (4) Following the formation of the raw sealant resin layer 67 ontop of the semi-hardened sealant resin layer 65, the wafer substrate 1is removed from the substrate holding unit 3. The wafer substrate 1 issubsequently subjected to heat treatments, first at 120° C. for 30 minand then at 150° C. for 120 min, for thermosetting the semi-hardenedsealant resin layer 65 and raw sealant resin layer 47, whereby a furthersealant resin layer 69 is formed having a thickness of about 20 μm, forexample (FIG. 9D).

[0131] As disclosed above, after forming the semi-hardening the rawsealant resin layer 63, that is carried out by first discharging a rawsealant resin layer 63 onto the surface 1 a of the wafer substrate 1 andthen forming semi-hardened sealant resin layer 65 by semi-hardening theraw sealant resin layer 63, by then forming thereon a further rawsealant resin layer 47, the sealant resin layer 69 can be formed with anincreased thickness.

[0132] Although the step of forming additional raw sealant resin layer47, which follows the step of semi-hardening the raw sealant resinlayer, is carried out only once in the present embodiment, it is notintended to be limiting.

[0133] For example, the step of forming additional raw sealant resinlayer may be repeated more than once so as to achieve a suitablethickness of the sealant resin layer. In addition, although theapparatus shown in FIG. 2 is utilized above, the apparatus of FIG. 4 mayalternatively be used for manufacturing the semiconductor devices.

[0134] Although the raw sealant resin layer 69 is formed on the entireupper surface area of wafer substrate 1 except the area for forming thebump electrode 61 in the present embodiment, it is not intended to belimiting to the method and apparatus for forming semiconductor devicesin present disclosure. For example, the raw sealant resin layer mayalternatively formed so as not to be formed on the dicing lines, forexample, as described earlier referring to FIGS. 6A, 6B, 8A and 8B.

[0135]FIGS. 10A through 10D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein. Theapparatus shown in FIG. 2 is utilized also in the present embodiment asthe apparatus for manufacturing the semiconductor devices. It may benoted that a discharging nozzles 11 is shown in the apparatus of FIGS.10A through 10D and other portions are herein abbreviated.

[0136] Referring now to FIGS. 2, 10A through 10D, the method formanufacturing semiconductor devices will be described together with thedescription on the operation of the manufacturing apparatus.

[0137] (1) A semiconductor wafer substrate 1 is provided thereon with ametallized wiring layer 39 and a pad electrode 41, which are each formedon a first surface 1 a of the substrate 1. A bump electrode 61 isadditionally formed on top of the pad electrode 41. The thus preparedentire structure of the semiconductor wafer substrate 1 is subsequentlyplaced on a substrate holding unit 3 with the first surface 1 a up.

[0138] Following the calculation by the control unit 33, of the area ofthe semiconductor wafer substrate 1, onto which sealant resin is to bedischarged, the movements of the stage unit 9 and discharging heads 11are controlled, the discharge of raw sealant resin is initiated onto thesurface 1 a of the wafer substrate 1, whereby a raw sealant resin layer64 having a thickness of approximately 20 μm is formed on the surface 1a of the wafer substrate 1 except the area for forming the bumpelectrode 61 (FIG. 10A).

[0139] (2) Following the formation of the raw sealant resin layer 64 onthe surface 1 a of the wafer substrate 1 except the area for forming thebump electrode 61, the wafer substrate 1 is subjected to heat treatmentat 90° C. for 30 min to form a semi-hardened layer, whereby asemi-hardened sealant resin layer 66 is formed (FIG. 9B).

[0140] (3) Subsequently, by controlling the movements of the stage unit9 and discharging heads 11, another raw sealant resin layer 71 is formedto a thickness of approximately 20 μm, for example, on top of thesemi-hardened sealant resin layer 66 such that the finished sealantresin layer have a surface of predetermined structure such as unevensurface shape corresponding to, for example, an assembled wiring patternon circuit board (FIG. 10C).

[0141] (4) Following the formation of the raw sealant resin layer 71 onthe surface of predetermined shape and location, the wafer substrate 1is removed from the substrate holding unit 3. The wafer substrate 1 issubsequently subjected to heat treatments, first at 120° C. for 30 minand then at 150° C. for 120 min, for thermosetting the semi-hardenedsealant resin layer 66 and raw sealant resin layer 71, whereby a furthersealant resin layer 73 is formed having the predetermined uneven surfacestructure (FIG. 10D). As disclosed above, by suitably choosing thelocation for forming an upper layer of the raw sealant resin, thesealant resin layer 73 can be formed having the surface of predetermineduneven structure.

[0142] Although the surface of predetermined uneven structure of thefinished sealant resin layer is formed in the present embodiment bysuitably choosing and adjusting the location for discharging the rawsealant resin layer 71 which is to be semi-hardened to form the sealantresin layer, it is not intended to be limiting to the method andapparatus for forming semiconductor devices in present disclosure.

[0143] For example, the predetermined uneven structure may alternativelybe formed not by the sealant resin layer 71 but one or more layersoverlying the layer 71. In addition, although the apparatus shown inFIG. 2 is utilized above, the apparatus of FIG. 4 may alternatively beused for manufacturing the semiconductor devices.

[0144]FIGS. 11A through 11D are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein. Theapparatus shown in FIG. 2 is utilized also in the present embodiment asthe apparatus for manufacturing the semiconductor devices. It may benoted that a discharging nozzles 11 is shown in the apparatus of FIGS.11A through 11D and other portions are herein abbreviated.

[0145] Referring now to FIGS. 2, 11A through 11D, the method formanufacturing semiconductor devices will be described together with thedescription on the operation of the manufacturing apparatus.

[0146] (1) A semiconductor wafer substrate 1 is provided thereon with ametallized wiring layer 39 and a pad electrode 41, which are each formedon a first surface 1 a of the substrate 1. A bump electrode 43 isadditionally formed on top of the pad electrode 41. The thus preparedentire structure of the semiconductor wafer substrate 1 is subsequentlyplaced on a substrate holding unit 3 with the first surface 1 a, facingup.

[0147] Following the calculation by the control unit 33, of the area ofthe semiconductor wafer substrate 1, onto which sealant resin is to bedischarged, the movements of the stage unit 9 and discharging heads 11are controlled and the discharge of raw sealant resin is initiated ontothe surface 1 a of the wafer substrate 1 (FIG. 11A).

[0148] (2) A raw sealant resin layer is formed by adjusting thethickness thereof at each location such that a finished sealant resinlayer have a surface of predetermined structure having uneven surfaceshape corresponding to, for example, an assembled wiring pattern oncircuit board.

[0149] In the present embodiment, for example, there formed through thecontrol of movements of the stage unit 9 and discharging heads 11 aretwo kinds of regions of raw sealant resin layer 75 such as thick layerregions 75 a with raw sealant resin of approximately 20 μm thick andthin layer regions 75 b of approximately 10 μm thick.

[0150] By thus making the thickness of raw sealant resin layerdifferent, i.e., smaller for the regions 75 b than the regions 75 a, thethickness of the resulting layer can suitably adjusted at respectivelocations (FIG. 11B).

[0151] (3) By controlling the amount of raw sealant resin to bedischarged at each location, a raw sealant resin layer 75 is formed onthe surface 1 a of the wafer substrate 1, having thick layer regions 75a and thin layer regions 75 b (FIG. 11C).

[0152] (4) After removed from the substrate holding unit 3, the wafersubstrate 1 is subsequently subjected to heat treatments, first at 120°C. for 30 min and then at 150° C. for 120 min, for thermosetting the rawsealant resin layer 75, whereby a further sealant resin layer 77 isformed at the location corresponding to the thin layer regions 75 b to athickness of approximately 15 μm, having concave portions 77 a ofapproximately 20 μm deep, for example (FIG. 11D).

[0153] As disclosed above, by suitably differentiating the amount of rawsealant resin during discharging steps depending on locations, thesealant resin layer can be formed having the predetermined surfacestructure such as, for example, uneven surface shape corresponding toassembled wiring pattern on circuit board. In addition, although theapparatus shown in FIG. 2 is utilized above, the apparatus of FIG. 4 mayalternatively be used for manufacturing the semiconductor devices.

[0154] Although the protruded-shaped bump electrodes 43, 61 are shownherein above as the electrodes formed on the semiconductor wafersubstrate 1, it is not intended to be limiting to the method andapparatus for forming semiconductor devices in present disclosure. Forexample, so called post electrodes such as those pillar-shaped formed ofcopper, for example, may alternatively be utilized in the method andapparatus for forming the semiconductor devices of the presentdisclosure.

[0155] In addition, the apparatus for forming the semiconductor devicesof the present disclosure can be adopted to forming semiconductordevices, which are each provided with flat pad electrodes and sealantresin layer, formed on the surface of semiconductor wafer substrate, andopenings of sealant resin layer, that are formed above the padelectrodes.

[0156] Furthermore, the method and apparatus for forming thesemiconductor devices of the present disclosure can be applied to theformation of sealant resin layers on the surface of semiconductor wafersubstrates which are each provided thereon with flat pad electrodes.

[0157]FIGS. 12A through 12C are each cross-sectional views illustratingthe method for manufacturing semiconductor devices during various stagesin the process according to another embodiment disclosed herein. Theapparatus shown in FIG. 2 is utilized also in the present embodiment asthe apparatus for manufacturing the semiconductor devices. It may benoted that a discharging nozzles 11 is shown in the apparatus of FIGS.12A through 12C and other portions are herein abbreviated.

[0158] Referring now to FIGS. 2, 12A through 12C, the method formanufacturing semiconductor devices will be described together with thedescription on the operation of the manufacturing apparatus.

[0159] (1) A semiconductor wafer substrate 1 is provided thereon with ametallized wiring layer 39 and a pad electrode 41, which are each formedon a first surface 1 a of the substrate 1. The thus prepared entirestructure of the semiconductor wafer substrate 1 is subsequently placedon a substrate holding unit 3 with the first surface 1 a up.

[0160] Following the calculation by the control unit 33, of the area ofthe semiconductor wafer substrate 1, onto which sealant resin is to bedischarged, the movements of the stage unit 9 and discharging heads 11are controlled and the discharge of raw sealant resin is initiated ontothe surface 1 a of the wafer substrate 1, to thereby form a raw sealantresin layer 79 (FIG. 12A).

[0161] (2) By suitably controlling the discharging heads 11 anddischarging raw sealant resin onto the surface 1 a of the wafersubstrate 1, a raw sealant resin layer 79 of approximately 20 μm thickis formed on the surface 1 a of the semiconductor wafer substrate 1,including the areas above metallized wiring layer 39 and on thecircumference of the pad electrodes 41, and excluding the areas for padopenings 81 (FIG. 12B).

[0162] (3) Following the formation of raw sealant resin layer, the wafersubstrate 1 is removed from the substrate holding unit 3. The wafersubstrate 1 is subsequently subjected to heat treatments, first at 120°C. for 30 min and then at 150° C. for 120 min, for thermosetting the rawsealant resin layer 79, whereby a further sealant resin layer 83 isformed having openings 81 above the pad electrodes 41 (FIG. 12C).

[0163] As disclosed above, the sealant resin layer 83 is formed havingopenings 81 above the pad electrodes 41 according to the embodimentdisclosed herein. Since this is achieved without well known etchingprocess steps, the number of steps can be reduced, thereby facilitatingfor reducing manufacturing costs.

[0164] In addition, since the wasteful use of resinous material can bereduced compared with the method for forming the sealant resin layer byspin coating, manufacturing costs can be reduced with the presentmethod. Still in addition, during the formation of the raw sealant resinlayer 79 having openings 81 above the pad electrodes 41, two dischargingheads may be used each being capable of discharging different amount ofraw sealant resin as descried earlier referring to FIGS. 5A through 5C.

[0165] That is, for the area in vicinity of the pad openings 81,relatively precise boundary formation is carried out using onedischarging head having the capability of discharging smaller liquiddroplets, while the other discharging head having the capability ofdischarging larger liquid droplets is used for other areas, therebyimproving the throughput for device fabrication.

[0166] Still alternatively, as described earlier referring to FIGS. 6Aand 6B, the sealant resin layer may be formed on the surface 1 a of thewafer substrate 1 except the top portion of the bump electrode 43 andcenter portions of dicing lines 51. As a result, the warping of thewafer substrate 1, which may be caused by stress, can be alleviated.

[0167] As described earlier referring to FIGS. 8A and 8B, a sealantresin layer 55 is thus formed on the surface 1 a of the wafer substrate1 except the areas of the bump electrode 43, all dicing lines 51 and inthe vicinity of intersecting points of the dicing lines, therebyalleviating the occurrence of warping of the wafer substrate 1, whichmay be caused by stress.

[0168] In the thus formed semiconductor devices, rounded corners areformed at four corners 85 and at the upper edge portions 87 of thesealant resin layer 83 as viewed along the extension of the side linesof the upper edge portions as shown in FIGS. 13A and 13B. As a result,chipping off of the resin layer can be alleviated during either dicingsteps or conveying steps following the carving out of the semiconductordevices.

[0169] Alternatively, as described earlier referring to FIGS. 9A through9D, after forming a raw sealant resin layer on the area except padopening forming area 81 on the surface 1 a of the wafer substrate 1, theraw sealant resin layer is thermo-set to form a semi-hardened sealantresin layer. Thereafter, a further raw sealant resin layer can be formedon the semi-hardened sealant resin layer. As a result, the thickness ofresultant layer can be increased.

[0170] Furthermore, in a similar manner to that described earlierreferring to FIGS. 10A through 10D, after forming a raw sealant resinlayer on the area except pad opening forming area 81 on the surface 1 aof the wafer substrate 1, the raw sealant resin layer is thermo-set toform a semi-hardened sealant resin layer. Thereafter, a further rawsealant resin layer may be formed on the semi-hardened sealant resinlayer. As a result, the sealant resin layer can be formed having thepredetermined uneven surface structure.

[0171] Alternatively, in a similar manner to that described earlierreferring to FIGS. 11A through 11D, by suitably differentiating theamount of raw sealant resin during discharging steps depending on thelocation on the surface 1 a of the wafer substrate 1 excluding the areafor forming the pad openings 81, the sealant resin layer can be formedhaving the predetermined surface structure.

[0172] While the present disclosure has been described in connectionwith preferred embodiments, it will be understood that it is notintended to limit the disclosure to these embodiments. On the contrary,it is intended to cover alternatives.

[0173] For example, although a thermosetting resin is used as the rawsealant resin in the present disclosures, other sealant resin such as aphoto-curing resin or UV (ultra-violet light) curing resin mayalternatively be used. In such a case, curing steps suitable for theresin can be adopted, such as light beam irradiation for thephoto-curing resin, for example.

[0174] Although there controlled in the present disclosures are thetemperatures in the resin container unit 15, fluid feeding path 17,discharging vessel 19, in the discharging heads 11, 49, to therebyproperly control the temperature of the surface 1 a of wafer substrate1, the steps may not be necessary for certain apparatus and method forforming semiconductor devices, as long as the resin material presentlyin use retains suitable viscosity without any temperature control.

[0175] In addition, the discharging heads 11, 49 are provided with theposition thereof being fixed and then positioned by properly displacingthe substrate holding unit 3 in the embodiments described earlierreferring to FIGS. 2 and 4.

[0176] The apparatus of the disclosure may alternatively be providedwith other structure, in which either the discharging heads or bothdischarging heads and substrate holding unit can be displaced.

[0177] Still in addition, although the piezoelectric type discharginghead such as the noted discharging head 11 is used for dischargingliquid droplets of raw sealant resin herein above, the apparatus formanufacturing the devices may alternatively be provided with other typedischarging heads such as, for example, ones of thermal jet typeutilizing the vapor pressure generated from liquid through rapidheating, and of electromagnetic type operating valveselectromagnetically.

[0178] Although the discharging head described earlier has the structuresimilar to printer head for use in ink jet printers, discharging headsof any other type may alternatively be used as long as the heads arecapable of discharging liquid droplets of raw sealant resin onto thesurface of wafer substrate.

[0179] In addition, although the resin container unit 15 is provided foreach discharging nozzle for containing the raw sealant resin, thecontainer unit may alternatively be provided in common for pluraldischarging nozzles. Further, although plural nozzles are formed in onedischarging head as noted earlier, the discharging head mayalternatively be provided with one nozzle.

[0180] In addition, the semiconductor wafer substrate 1 is not limitedto the type shown in the drawings throughout the embodiments. Forexample, a wafer substrate having dicing grooves (half-dicing type) mayalternatively be used in the apparatus for manufacturing thesemiconductor devices disclosed herein.

[0181] It is apparent from the above description including the examples,the apparatus and method disclosed herein have several advantages oversimilar apparatuses and methods previously known. Although some aredescribed earlier in the text, several points are summarized as follows.

[0182] With the apparatus and method disclosed herein, for example,since the raw sealant resin layer is formed except the portion for theelectrode, the manufacturing costs can be reduced. In addition, sincethe amount of the resinous material to be discharged onto the surface ofthe wafer substrate can suitably be controlled depending on the portionthereof specifically, the precise control of the thickness of thesealant resin layer can be achieved with more ease.

[0183] It should be noted these control of the raw sealant resin layerare suitably achieved by means of several components included in theapparatus such as, for example, the discharging mechanism with theplurality of discharging nozzles and discharging heads capable ofdischarging different amount of raw sealant resin, and the temperaturecontrol mechanism for suitably controlling the temperatures of the rawsealant resin.

[0184] In addition, the control unit is adapted to assume the control ofat least the discharging mechanism and temperature control mechanismsuch that the raw sealant resin is properly discharged onto the firstsurface of semiconductor wafer substrate.

[0185] The sealant resin layer can be formed having openings above thepad electrodes and this can be achieved without well known etchingprocess steps.

[0186] In addition, for the area in vicinity of the pad openings,relatively precise boundary formation can be carried out using onedischarging head having the capability of discharging smaller liquiddroplets, while the other discharging head having the capability ofdischarging larger liquid droplets is used for other areas.

[0187] The number of steps can therefore be reduced and the wasteful useof resinous material can be reduced compared with the method for formingthe sealant resin layer by spin coating. As a result, the throughput forsemiconductor device fabrication is improved and manufacturing costs canbe reduced.

[0188] Furthermore, after forming a raw sealant resin layer on the areaexcept that of the pad opening on the surface of the wafer substrate,the raw sealant resin layer may be thermo-set to form a semi-hardenedsealant resin layer. Thereafter, a further raw sealant resin layer canbe formed on the semi-hardened sealant resin layer. As a result, thethickness of resultant layer can be increased.

[0189] By the substrate temperature control mechanism included in theapparatus, the viscosity of the raw sealant resin attached to thesurface of wafer substrate can suitably controlled.

[0190] As a result, there achieved are improved surface flatness of thelayer of raw sealant resin, proper filling of raw sealant resin intominute structural portions of the wafer substrate, and control of thethickness of the layer of raw sealant resin.

[0191] In addition, predetermined uneven surface structure can be formedwith the apparatus and method disclosed herein. Namely, after forming araw sealant resin layer on the area except that of the pad opening onthe surface of wafer substrate, the raw sealant resin layer isthermo-set to form a semi-hardened sealant resin layer, and a furtherraw sealant resin layer may thereafter be formed on the semi-hardenedsealant resin layer.

[0192] Alternatively, by suitably differentiating the amount of rawsealant resin during discharging steps depending on the location on thesurface of the wafer substrate excluding the area for forming the padopenings, the raw sealant resin layer can be formed and subsequentlyhardened.

[0193] Furthermore, since the sealant resin layer is formed on thesurface of the wafer substrate except the areas of the bump electrode,all dicing lines and in the vicinity of intersecting points of thedicing lines, the occurrence of warping of the wafer substrate 1, whichmay be caused by stress, can be alleviated.

[0194] In addition, rounded corners may be provided at four corners andat the upper edge portions of the sealant resin layer as viewed alongthe extension of the side lines of the upper edge portions. As a result,chipping off of the resin layer can be alleviated during either dicingsteps or conveying steps following the carving out of the semiconductordevices.

[0195] For the semiconductor device disclosed herein, the sealant resinlayer can be formed using the present apparatus on the surface ofsemiconductor wafer substrate such that a portion of the electrode isexcluded from the formation of the sealant resin layer and that edgeportions of the sealant resin layer are formed with a rounded shape. Asa result, chipping off of the resin layer can be alleviated duringeither dicing steps or conveying steps following the carving out of thesemiconductor devices.

[0196] The process steps set forth in the present description on theformation of sealant resin layers on the surface of wafer substrate maybe implemented using conventional general purpose microprocessors,programmed according to the teachings in the present specification, aswill be appreciated to those skilled in the relevant arts. Appropriatesoftware coding can readily be prepared by skilled programmers based onthe teachings of the present disclosure, as will also be apparent tothose skilled in the relevant arts.

[0197] The present specification thus include also a computer-basedproduct which may be hosted on a storage medium, and includeinstructions which can be used to pro/gram a microprocessor to perform aprocess in accordance with the present disclosure. This storage mediumcan include, but not limited to, any type of disc including floppydiscs, optical discs, CD-ROMs, magneto-optical discs, ROMs, RAMs,EPROMs, EEPROMs, flash memory, magnetic or optical cards, or any type ofmedia suitable for storing electronic instructions.

[0198] Additional modifications and variations of the present inventionare possible in light of the above teachings. It is therefore to beunderstood that within the scope of the appended claims, the inventionmay be practiced other than as specifically described herein.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. An apparatus for manufacturing a semiconductordevice, comprising: a substrate holding unit for holding a semiconductorwafer substrate, wherein said semiconductor wafer substrate is providedwith at least one electrode formed on a first surface thereof; adischarging mechanism for discharging droplets of raw sealant resincontained in a resin container unit through at least one dischargingnozzle onto said first surface of said semiconductor wafer substrateheld on said substrate holding unit; a drive mechanism for displacing atleast one of said semiconductor wafer substrate and said dischargingnozzle; and a control unit for controlling said discharging mechanismand said drive mechanism such that said raw sealant resin is attached tosaid first surface of said semiconductor wafer substrate except at leasta portion of said electrode.
 2. The apparatus for manufacturing asemiconductor device according to claim 1, wherein said electrode formedon said first surface of said semiconductor wafer substrate is aprotruded-shaped electrode, and wherein said control unit is adapted tocontrol said discharging mechanism and said drive mechanism such thatsaid raw sealant resin is attached to said first surface except a tipportion of said protruded-shaped electrode.
 3. The apparatus formanufacturing a semiconductor device according to claim 1, wherein saiddischarging mechanism is provided with a plurality of dischargingnozzles.
 4. The apparatus for manufacturing a semiconductor deviceaccording to claim 1, wherein said substrate holding unit is providedwith a substrate temperature control mechanism for controlling atemperature of at least said semiconductor wafer substrate.
 5. Theapparatus for manufacturing a semiconductor device according to claim 1,further comprising at least two kinds of discharging mechanisms, eachbeing capable of discharging respective different amounts of raw sealantresin.
 6. The apparatus for manufacturing a semiconductor deviceaccording to claim 1, further comprising a heater for heating said rawsealant resin contained in said resin container unit.
 7. The apparatusfor manufacturing a semiconductor device according to claim 1, whereinsaid control unit controls said discharging mechanism and said drivemechanism such that said raw sealant resin is not attached to at least aportion of dicing lines of said semiconductor wafer substrate.
 8. Theapparatus for manufacturing a semiconductor device according to claim 1,wherein said control unit is adapted to control said dischargingmechanism and said drive mechanism such that said raw sealant resin isnot attached to dicing lines of said semiconductor wafer substrate andforms a layer with edges of a rounded shape in a vicinity ofintersecting points of said dicing lines.
 9. The apparatus formanufacturing a semiconductor device according to claim 5, wherein saidcontrol unit controls said discharging mechanism and said drivemechanism such that a first discharging mechanism of said at least twokinds of discharging mechanisms is capable of discharging droplets ofraw sealant resin of an amount smaller than other discharging mechanismsused for discharging said raw sealant resin for an area in a vicinity ofsaid electrode.
 10. The apparatus for manufacturing a semiconductordevice according to claim 6, wherein said control unit controls saiddischarging mechanism and said drive mechanism such that said rawsealant resin is not attached to at least a portion of dicing lines ofsaid semiconductor wafer substrate.
 11. The apparatus for manufacturinga semiconductor device according to claim 6, wherein said control unitcontrols said discharging mechanism and said drive mechanism such thatsaid raw sealant resin is not attached to dicing lines of saidsemiconductor wafer substrate and forms a layer with edges of a roundedshape in vicinity of intersecting points of said dicing lines.
 12. Amethod for manufacturing a semiconductor device, comprising: resinsealing a semiconductor wafer substrate, said semiconductor wafersubstrate provided with at least one electrode formed on a first surfacethereof and said resin sealing including at least one of: scanning adischarging nozzle for discharging droplets of raw sealant resin whilesuitably discharging said droplets; forming a layer of said raw sealantresin on a first surface of said semiconductor wafer substrate such thata portion of said electrode is excepted from said layer; and forming asealant resin layer by hardening said layer of raw resin sealant. 13.The method for manufacturing a semiconductor device according to claim12, wherein said electrode formed on said first surface of saidsemiconductor wafer substrate is a protruded-shaped electrode, andwherein said step of forming said layer includes forming except a tipportion of said protruded-shaped electrode.
 14. The method formanufacturing a semiconductor device according to claim 12, wherein saidstep of forming said layer of raw sealant resin includes dischargingdroplets of raw sealant resin of an amount smaller for an area in avicinity of said electrode than other portions of said semiconductorwafer substrate.
 15. The method for manufacturing a semiconductor deviceaccording to claim 12, wherein said step of forming said layer of rawsealant resin includes forming said layer such that the layer does notattach to dicing lines of said semiconductor wafer substrate and suchthat said layer has a rounded shape in vicinity of intersecting pointsof said dicing lines.
 16. The method for manufacturing a semiconductordevice according to claim 12, wherein said step of forming said layer ofraw sealant resin includes forming said layer by discharging droplets ofraw sealant resin of an amount suitably differentiated depending on thelocation on said surface of said wafer substrate.
 17. The method formanufacturing a semiconductor device according to claim 12, wherein saidstep of forming said layer of raw sealant resin includes: forming saidlayer of raw sealant resin; hardening said layer of raw sealant resin toform a first semi-hardened sealant resin layer; repeating at least oncea further step of forming a further raw sealant resin layer andhardening said further raw sealant resin layer to form a furthersemi-hardened sealant resin layer; and hardening said firstsemi-hardened sealant resin layer and said further semi-hardened sealantresin layer altogether.
 18. The method for manufacturing a semiconductordevice according to claim 14, wherein said step of forming said layer ofraw sealant resin includes forming said layer over said substrate withthe exception of at least a portion of dicing lines of saidsemiconductor wafer substrate.
 19. The method for manufacturing asemiconductor device according to claim 18, wherein said step of formingsaid layer of raw sealant resin includes forming said layer bydischarging droplets of raw sealant resin of an amount suitablydifferentiated depending on the location on said surface of said wafersubstrate.
 20. The method for manufacturing a semiconductor deviceaccording to claim 18, wherein said step of forming said layer of rawsealant resin includes: forming said layer of raw sealant resin,hardening said layer of raw sealant resin to form a first semi-hardenedsealant resin layer, repeating at least once a further step of forming afurther raw sealant resin layer and hardening said further raw sealantresin layer to form a further semi-hardened sealant resin layer, andhardening said first semi-hardened sealant resin layer and said furthersemi-hardened sealant resin layer altogether.
 21. A semiconductordevice, comprising: an electrode formed on a first surface of asemiconductor wafer substrate; and a sealant resin layer formed on saidfirst surface of said semiconductor wafer substrate such that a portionof said electrode is excepted from said layer and wherein edge portionsof said sealant resin layer are formed with a rounded shape.
 22. Thesemiconductor device according to claim 21, wherein: said electrodeformed on said first surface of said semiconductor wafer substrate is aprotruded-shaped electrode, and wherein said sealant resin layer isformed on said substrate with the exception of a tip portion of saidprotruded-shaped electrode.
 23. An apparatus for manufacturing asemiconductor device, comprising: substrate holding means for holding asemiconductor wafer substrate, wherein said substrate is provided withat least one electrode formed on a first surface thereof; means fordischarging droplets of raw sealant resin contained in a resin containerunit through at least one discharging nozzle onto said first surface ofsaid semiconductor wafer substrate held on said substrate holding unit;drive means for displacing at least one of said semiconductor wafersubstrate and said discharging nozzle; and means for controlling saiddischarging mechanism and said drive mechanism such that said rawsealant resin is attached to said first surface of said semiconductorwafer substrate with the exception of at least a portion of saidelectrode.
 24. The apparatus for manufacturing a semiconductor deviceaccording to claim 23, wherein said means for controlling controls saidmeans for discharging and said drive means such that said raw sealantresin is attached to said first surface with the exception of a tipportion of said protruded-shaped electrode.
 25. The apparatus formanufacturing a semiconductor device according to claim 23, wherein saidmeans for discharging is provided with a plurality of discharging nozzlemeans.
 26. The apparatus for manufacturing a semiconductor deviceaccording to claim 23, wherein said substrate holding means is providedwith a substrate temperature control means for controlling temperatureof at least said semiconductor wafer substrate.
 27. The apparatus formanufacturing a semiconductor device according to claim 23, furthercomprising: at least two kinds of means for discharging, each saiddischarging means being capable of discharging raw sealant resin in anamount different from the other.
 28. The apparatus for manufacturing asemiconductor device according to claim 23, further comprising: meansfor heating said raw sealant resin contained in said resin containermeans.
 29. The apparatus for manufacturing a semiconductor deviceaccording to claim 23, wherein said means for controlling controls saidmeans for discharging and said drive means such that said raw sealantresin is not attached to at least a portion of dicing lines of saidsemiconductor wafer substrate.
 30. The apparatus for manufacturing asemiconductor device according to claim 23, wherein said means forcontrolling controls said means for discharging and said drive meanssuch that said raw sealant resin is not attached to dicing lines of saidsemiconductor wafer substrate and forms a layer with edges of a roundedshape in vicinity of intersecting points of said dicing lines.
 31. Theapparatus for manufacturing a semiconductor device according to claim23, wherein said means for controlling controls said dischargingmechanism and said drive mechanism such that a first means fordischarging, of at least two kinds of means for discharging, is capableof discharging droplets of raw sealant resin of an amount smaller thanother means for discharging and said first means for discharging is usedfor discharging said raw sealant resin for an area in vicinity of saidelectrode.
 32. The apparatus for manufacturing a semiconductor deviceaccording to claim 28, wherein said means for controlling controls saidmeans for discharging and said drive means such that said raw sealantresin is not attached to at least a portion of dicing lines.
 33. Theapparatus for manufacturing a semiconductor device according to claim28, wherein said means for controlling controls said means fordischarging and said drive means such that said raw sealant resin is notattached to said dicing lines and forms a layer with edges of a roundedshape in vicinity of intersecting points of said dicing lines.
 34. Asemiconductor device manufacturing apparatus, comprising: asemiconductor wafer substrate, said semiconductor wafer substrate havingat least one electrode on a first surface thereof, and wherein saidsemiconductor wafer substrate is held in a substrate holding unit; atleast one discharging head for discharging raw sealant resin on saidsemiconductor wafer substrate and having at least one dischargingnozzle; a resin container unit connected to said discharging head andcontaining raw sealant resin; a drive mechanism for displacing at leastone of said semiconductor wafer substrate and said discharging head; anda control unit for controlling said discharging head and said drivemechanism.
 35. The apparatus according to claim 34 wherein said at leastone electrode has a protruded-shape.
 36. The apparatus according toclaim 35 wherein said control unit controls said discharging head andsaid drive mechanism such that said first surface of the semiconductorwafer substrate is covered by said raw sealant resin except for a tipportion of said protruded-shaped electrode.
 37. The apparatus accordingto claim 34 wherein said discharging head comprises a plurality ofdischarging nozzles.
 38. The apparatus according to claim 34 furthercomprising a temperature control mechanism for controlling a temperatureof at least said semiconductor wafer substrate.
 39. The apparatusaccording to claim 34 wherein said discharging mechanism furthercomprises at least two kinds of discharging mechanisms, each beingcapable of discharging respective different amounts of raw sealantresin.
 40. The apparatus according to claim 34 wherein said resincontainer unit further comprises a heater for heating said raw sealantresin contained in said resin container unit.